1 ipb025n08n3g 2016-03-31 final data sheet d2pak mosfet optimos a 3power-transistor ,80v features ?n-channel,normallevel ?excellentgatechargex r ds(on) product(fom) ?verylowon-resistance r ds(on) ?175coperatingtemperature ?pb-freeleadplating;rohscompliant ?qualifiedaccordingtojedec 1) fortargetapplication ?idealforhigh-frequencyswitchingandsynchronousrectification ?halogen-freeaccordingtoiec61249-2-21 table1keyperformanceparameters parameter value unit v ds 80 v r ds(on),max 2.5 m w i d 120 a type/orderingcode package marking relatedlinks ipb025n08n3 g pg-to 263 025n08n - 1) j-std20 and jesd22 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 optimos a 3power-transistor ,80v ipb025n08n3g 2016-03-31 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 optimos a 3power-transistor ,80v ipb025n08n3g 2016-03-31 final data sheet 1maximumratings at t a =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - 120 120 a t c =25c 1) t c =100c pulsed drain current 1) i d,pulse - - 480 a t c =25c avalanche energy, single pulse e as - - 1430 mj i d =100a, r gs =25 w gate source voltage v gs -20 - 20 v - power dissipation p tot - - 300 w t c =25c operating and storage temperature t j , t stg -55 - 175 c iec climatic category; din iec 68-1: 55/175/56 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 0.5 k/w - thermal resistance, junction - ambient, minimal footprint r thja - - 62 k/w - thermal resistance, junction - ambient, 6 cm 2 cooling area 2) r thja - - 40 k/w - 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 80 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2 2.8 3.5 v v ds = v gs , i d =270a zero gate voltage drain current i dss - - 0.1 10 1 100 a v ds =80v, v gs =0v, t j =25c v ds =80v, v gs =0v, t j =125c gate-source leakage current i gss - 1 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 2.0 2.4 2.5 3.9 m w v gs =10v, i d =100a v gs =6v, i d =50a gate resistance r g - 2.7 - w - transconductance g fs 94 187 - s | v ds |>2| i d | r ds(on)max , i d =100a 1) see diagram 3 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 optimos a 3power-transistor ,80v ipb025n08n3g 2016-03-31 final data sheet table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 10700 14200 pf v gs =0v, v ds =40v, f =1mhz output capacitance c oss - 2890 3840 pf v gs =0v, v ds =40v, f =1mhz reverse transfer capacitance c rss - 100 150 pf v gs =0v, v ds =40v, f =1mhz turn-on delay time t d(on) - 28 - ns v dd =40v, v gs =10v, i d =100a, r g,ext =1.6 w rise time t r - 73 - ns v dd =40v, v gs =10v, i d =100a, r g,ext =1.6 w turn-off delay time t d(off) - 86 - ns v dd =40v, v gs =10v, i d =100a, r g,ext =1.6 w fall time t f - 33 - ns v dd =40v, v gs =10v, i d =100a, r g,ext =1.6 w table6gatechargecharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 50 67 nc v dd =40v, i d =100a, v gs =0to10v gate to drain charge q gd - 30 45 nc v dd =40v, i d =100a, v gs =0to10v switching charge q sw - 50 72 nc v dd =40v, i d =100a, v gs =0to10v gate charge total q g - 155 206 nc v dd =40v, i d =100a, v gs =0to10v gate plateau voltage v plateau - 4.7 - v v dd =40v, i d =100a, v gs =0to10v output charge q oss - 210 279 nc v dd =40v, v gs =0v table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continous forward current i s - - 100 a t c =25c diode pulse current i s,pulse - - 400 a t c =25c diode forward voltage v sd - 1.0 1.2 v v gs =0v, i f =100a, t j =25c reverse recovery time t rr - 113 - ns v r =40v, i f = i s ,d i f /d t =100a/s reverse recovery charge q rr - 317 - nc v r =40v, i f = i s ,d i f /d t =100a/s 1) see 2 gate charge waveforms 2 for parameter definition d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 optimos a 3power-transistor ,80v ipb025n08n3g 2016-03-31 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 50 100 150 200 0 50 100 150 200 250 300 350 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 50 100 150 200 0 20 40 60 80 100 120 140 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 optimos a 3power-transistor ,80v ipb025n08n3g 2016-03-31 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 1 2 3 4 5 0 40 80 120 160 200 240 280 320 360 400 440 480 7 v 10 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 50 100 150 200 0 3 6 9 12 15 4.5 v 5 v 5.5 v 6 v 7 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 0 50 100 150 200 250 300 175 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 50 100 150 0 50 100 150 200 250 g fs =f( i d ); t j =25c d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 optimos a 3power-transistor ,80v ipb025n08n3g 2016-03-31 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0 1 2 3 4 5 6 98 % typ r ds(on) =f( t j ); i d =100a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2700 a 270 a v gs(th) =f( t j ); v gs = v ds ;parameter: i d diagram11:typ.capacitances v ds [v] c [pf] 0 20 40 60 80 10 1 10 2 10 3 10 4 10 5 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 0 10 1 10 2 10 3 25 c 175 c 25 c, 98% 175 c, 98% i f =f( v sd );parameter: t j d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 optimos a 3power-transistor ,80v ipb025n08n3g 2016-03-31 final data sheet diagram13:avalanchecharacteristics t av [s] i av [a] 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 25 c 100 c 150 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 50 100 150 200 0 2 4 6 8 10 12 60 v 40 v 20 v v gs =f( q gate ); i d =50apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 60 70 80 90 v br(dss) =f( t j ); i d =1ma d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms
9 optimos a 3power-transistor ,80v ipb025n08n3g 2016-03-31 final data sheet 5packageoutlines figure1outlinepg-to263,dimensionsinmm/inches d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms
10 optimos a 3power-transistor ,80v ipb025n08n3g 2016-03-31 final data sheet revisionhistory ipb025n08n3 g revision:2016-03-31 previous revision date subjects (major changes since last revision) 2016-03-31 update soa diagram trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 gate charge waveforms
|
